Cs adsorption on oxide films (Al2O3, MgO, SiO2)

被引：44

作者：

Brause, M ^{[1
]}

Ochs, D ^{[1
]}

Gunster, J ^{[1
]}

Mayer, T ^{[1
]}

Braun, B ^{[1
]}

Puchin, V ^{[1
]}

MausFriedrichs, W ^{[1
]}

Kempter, V ^{[1
]}

机构：

[1] TECH UNIV CLAUSTHAL, INST PHYS, D-38678 CLAUSTHAL ZELLERFELD, GERMANY

来源：

SURFACE SCIENCE | 1997年 / 383卷 / 2-3期

关键词：

alkali metals; aluminum oxide; chemisorption; clusters; magnesium oxides; metallic films; photon absorption spectroscopy; physical adsorption; silicon oxides; visible/ultraviolet absorption spectroscopy;

D O I：

10.1016/S0039-6028(97)00174-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Films of alumina, magnesia, and silica were exposed to cesium atoms at room temperature. Cesium adsorption as a function of exposure time was studied with metastable impact electron spectroscopy (MIES) and photoelectron spectroscopy (UPS; He I). On silica, cesium atoms readily chemisorb in the initial stages of exposure. The bonding is apparently due to the interaction with active surface oxygen such as non-bridging oxygen atoms. We suggest that on alumina and magnesia, the chemisorption of cesium, in the form of an ionic state, takes place at surface defects, presumably edge sites such as steps, kinks, corners, etc. In all cases studied, prolonged exposure leads to additional Ca adsorption. Apparently, patches with metallic properties (but no uniform adlayer) develop on the surface; they disappear after the cesium supply is interrupted. (C) 1997 Elsevier Science B.V.

引用

页码：216 / 225

页数：10

共 36 条

[1] MECHANISM OF ALKALI-PROMOTED OXIDATION OF SILICON [J].

ASENSIO, MC ;

MICHEL, EG ;

OELLIG, EM ;

MIRANDA, R .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1714-1716

[2] NATURE OF BONDING BETWEEN ALKALI-METALS AND SILICON SURFACE [J].

BATRA, IP ;

BAGUS, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :600-606

[3] ATOMIC AND ELECTRONIC-STRUCTURE OF THE NA/SI(001)-(2X1) SURFACE [J].

BATRA, IP .

PHYSICAL REVIEW B, 1989, 39 (06) :3919-3922

[4] A THEORETICAL-STUDY OF THE GROWTH OF METALS ON SILICON [J].

BATRA, IP .

APPLIED SURFACE SCIENCE, 1992, 60-1 :136-145

[5]

BONZEL HP, 1989, PHYSICS CHEM ALKALI

[6] INTRA-ATOMIC AND INTER-ATOMIC AUGER PROCESSES IN COLLISIONS OF LOW-ENERGY HE++, HE+, HE-STAR (23 S,21 S) AND LI+ WITH LI COVERED W(110) SURFACES [J].

BRENTEN, H ;

MULLER, H ;

KEMPTER, V .

ZEITSCHRIFT FUR PHYSIK D-ATOMS MOLECULES AND CLUSTERS, 1992, 22 (03) :563-568

[7] SURFACE METALLIZATION OF SILICON BY POTASSIUM ADSORPTION ON SI(001)-(2X1) [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW B, 1988, 37 (06) :2955-2967

[8] SURFACE ELECTRONIC-STRUCTURE OF SILICON DIOXIDE [J].

CIRACI, S ;

ELLIALTIOGLU, S .

PHYSICAL REVIEW B, 1982, 25 (06) :4019-4030

[9] NOVEL ELECTRONIC-PROPERTIES OF A POTASSIUM OVERLAYER ON SI(001)-(2X1) - REPLY [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW LETTERS, 1988, 60 (06) :547-547

[10] GROWTH OF ULTRATHIN ALUMINA FILMS ON W(110) [J].

GUNSTER, J ;

BRAUSE, M ;

MAYER, T ;

HITZKE, A ;

KEMPTER, V .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 100 (2-3) :411-416

← 1 2 3 4 →