Theoretical imaging of current profiles in two-dimensional devices

被引:27
作者
Cresti, A.
Grosso, G.
Parravicini, G. Pastori
机构
[1] Scuola Normale Super Pisa, NEST INFM, I-56126 Pisa, Italy
[2] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy
[3] NEST INFM, I-56127 Pisa, Italy
[4] NEST INFM, I-27100 Pavia, Italy
[5] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
关键词
D O I
10.1140/epjb/e2006-00408-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper addresses in a concise and rigorous way the basic tools for the study of local longitudinal and transverse microscopic currents in two-dimensional devices. The emphasis is on the optimized use of the Keldysh nonequilibrium Green's function theory together with the tight-binding representation of the electronic system. We elaborate general analytic expressions of current profiles, useful for modeling and simulating the local site-to-site flow of carriers; furthermore, in broken time-reversal symmetry, the formalism discerns unambiguously persistent and transport contributions to the bond currents. Our approach achieves a workable theoretical imaging, resolved in space and energy, of the microscopic currents through mesoscopic devices.
引用
收藏
页码:537 / 549
页数:13
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