Low-Dropout Voltage Source: An Alternative Approach for Low-Dropout Voltage Regulators

被引:11
作者
Aminzadeh, Hamed
Nabavi, Mohammad R. [1 ]
Serdijn, Wouter A. [2 ]
机构
[1] Catena Microelect, NL-2628 XG Delft, Netherlands
[2] Delft Univ Technol, Bioelect Sect, NL-2628 CN Delft, Netherlands
关键词
Band-gap reference; line-voltage compensation; low-dropout (LDO) regulator; metal-oxide-semiconductor field-effect transistor (MOSFET) only; start up; FREQUENCY COMPENSATION; BANDGAP REFERENCE; CIRCUITS;
D O I
10.1109/TCSII.2014.2319952
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this brief, a high-order temperature-compensated 0.6-V low-dropout voltage source (LDVS) is realized in standard 0.13-mu m CMOS technology. The LDVS operates at supply voltages down to 0.75 V and consumes only 39 mu A while providing up to 100 mA of load current. Gate-to-channel capacitance values of MOSFETs are employed to implement the capacitors, reducing chip area and enabling integration in any inexpensive CMOS technology. The regulation loop is compensated using a combined pole-splitting and feedforward technique, which results in stable operation from a no-load current to 100 mA of full-load current. A temperature-dependent current-driven voltage generator is proposed to suppress the line-voltage sensitivity of the LDVS. To further improve line regulation, a line-voltage compensation circuit is introduced, which lowers the line sensitivity by about three times down to 0.54%/V. With a supply voltage of 1 V and no output filtering capacitor, the mean power-supply rejection is -51 and -24 dB for 1 and 10 MHz, respectively. The proposed LDVS requires no startup circuit. The 0.1% startup settling time is 73 mu s with a supply voltage of 0.8 V and a load current of 1 mA. In the temperature range of -25 degrees C- +85 degrees C, it demonstrates a maximum temperature drift of only 32 ppm/degrees C.
引用
收藏
页码:413 / 417
页数:5
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