Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors

被引：158
作者：
Ramachandran, S.
Narayan, J.
Prater, J. T.
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, NSF, Ctr Adv Mat & Smart Struct, Raleigh, NC 27695 USA
[2] USA, Res Off, Div Mat Sci, Res Triangle Pk, NC 27709 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2213930
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the properties of Zn1-xMnxO (x=0.01-0.1) thin films grown on c-plane sapphire single crystals by pulsed laser deposition. The electrical, magnetic, optical, and microstructural properties of these thin films have been characterized systematically, with a primary focus on establishing a correlation between magnetic properties and electrical conductivity. We have shown that this system exhibits ferromagnetism at room temperature when in the conducting as-deposited state. However, upon high temperature annealing in excess oxygen, the samples become insulating and exhibit nonferromagnetic behavior at room temperature. Thus, it is possible to tune ferromagnetism in Zn1-xMnxO diluted magnetic semiconductors by controlling the concentrations of oxygen vacancies and substitutional Mn dopants.(c) 2006 American Institute of Physics.
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