Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs

被引：55

作者：

Kohlhaas, R. B. ^{[1
]}

Breuer, S. ^{[1
]}

Nellen, S. ^{[1
]}

Liebermeister, L. ^{[1
]}

Schell, M. ^{[1
]}

Semtsiv, M. P. ^{[2
]}

Masselink, W. T. ^{[2
]}

Globisch, B. ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Einsteinufer 37, D-10587 Berlin, Germany

[2] Humboldt Univ, Dept Phys, Newtonstr 15, Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 22期

关键词：

TIME-DOMAIN SPECTROMETER;

D O I：

10.1063/1.5095714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rhodium (Rh)-doped In0.53Ga0.47As grown by gas-source molecular beam epitaxy is investigated as a terahertz (THz) detector antenna for optical excitation at 1550nm. The 4d transition metal rhodium acts as a deep level and ultrafast trapping center. At a doping concentration around 8x10(19)cm(-3), InGaAs:Rh exhibits ideal properties for application as a THz antenna: an ultrashort carrier lifetime below 200 fs in combination with a mobility of 1010cm(2)/Vs. The THz detectors fabricated from this sample show a record peak dynamic range of 105dB and a bandwidth of up to 6.5THz.

引用

页数：5

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