Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays
被引:32
作者:
Ji, X. H.
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机构:
S China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R ChinaS China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
Ji, X. H.
[1
]
Zhang, Q. Y.
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机构:
S China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R ChinaS China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
Zhang, Q. Y.
[1
]
Lau, S. P.
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaS China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
Lau, S. P.
[2
]
Jiang, H. X.
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机构:
Kansas State Univ, Dept Phys, Manhattan, KS 66506 USAS China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
Jiang, H. X.
[3
]
Lin, J. Y.
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机构:
Kansas State Univ, Dept Phys, Manhattan, KS 66506 USAS China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
Lin, J. Y.
[3
]
机构:
[1] S China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
aluminium compounds;
electron field emission;
III-V semiconductors;
nanostructured materials;
photoluminescence;
thermo-optical effects;
ultraviolet spectra;
wide band gap semiconductors;
ALUMINUM NITRIDE;
CARBON NANOTUBES;
RAMAN-SCATTERING;
NANOWIRE ARRAYS;
GROWTH;
D O I:
10.1063/1.3126055
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Large-scale single-crystalline AlN nanotip arrays have been fabricated via a facile catalysis-free approach using AlCl3 powder and NH3 as starting materials. These nanotips exhibit an intense broad ultraviolet emission centered at 3.28 eV. The field emission features a notable electron current with a low turn-on field. The turn-on and threshold electric field are found to decrease substantially from 7.7 to 3.9 V/mu m and 7.9 to 4.1 V/mu m, respectively, while the estimated field enhancement factor increases from 483 to 1884 with increasing the ambient-temperature from room temperature to 573 K. The dependence of the photoluminescence and electron field emission with temperature and the possible mechanism involved has systematically been investigated and thus discussed.