Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays

被引:32
作者
Ji, X. H. [1 ]
Zhang, Q. Y. [1 ]
Lau, S. P. [2 ]
Jiang, H. X. [3 ]
Lin, J. Y. [3 ]
机构
[1] S China Univ Technol, MOE Key Lab Specially Funct Mat, Guangzhou 510641, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
关键词
aluminium compounds; electron field emission; III-V semiconductors; nanostructured materials; photoluminescence; thermo-optical effects; ultraviolet spectra; wide band gap semiconductors; ALUMINUM NITRIDE; CARBON NANOTUBES; RAMAN-SCATTERING; NANOWIRE ARRAYS; GROWTH;
D O I
10.1063/1.3126055
中图分类号
O59 [应用物理学];
学科分类号
摘要
Large-scale single-crystalline AlN nanotip arrays have been fabricated via a facile catalysis-free approach using AlCl3 powder and NH3 as starting materials. These nanotips exhibit an intense broad ultraviolet emission centered at 3.28 eV. The field emission features a notable electron current with a low turn-on field. The turn-on and threshold electric field are found to decrease substantially from 7.7 to 3.9 V/mu m and 7.9 to 4.1 V/mu m, respectively, while the estimated field enhancement factor increases from 483 to 1884 with increasing the ambient-temperature from room temperature to 573 K. The dependence of the photoluminescence and electron field emission with temperature and the possible mechanism involved has systematically been investigated and thus discussed.
引用
收藏
页数:3
相关论文
共 24 条
[1]   Effect of temperature on the electron field emission from aligned carbon nanofibers and multiwalled carbon nanotubes [J].
Ahmed, Sk. E. ;
Das, S. ;
Mitra, M. K. ;
Chattopadhy, K. K. .
APPLIED SURFACE SCIENCE, 2007, 254 (02) :610-615
[2]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[3]   Aligned AlN nanorods with multi-tipped surfaces - Growth, field-emission, and cathodoluminescence properties [J].
He, JH ;
Yang, RS ;
Chueh, YL ;
Chou, LJ ;
Chen, LJ ;
Wang, ZL .
ADVANCED MATERIALS, 2006, 18 (05) :650-+
[4]   Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires [J].
Hu, JT ;
Ouyang, M ;
Yang, PD ;
Lieber, CM .
NATURE, 1999, 399 (6731) :48-51
[5]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[6]  
*JCPDS, 251133 JCPDS
[7]   Ferromagnetic Cu-doped AlN nanorods [J].
Ji, X. H. ;
Lau, S. P. ;
Yu, S. F. ;
Yang, H. Y. ;
Herng, T. S. ;
Chen, J. S. .
NANOTECHNOLOGY, 2007, 18 (10)
[8]   Thermionic emission of amorphous diamond and field emission of carbon nanotubes [J].
Kan, MC ;
Huang, JL ;
Sung, JC ;
Chen, KH ;
Yau, BS .
CARBON, 2003, 41 (14) :2839-2845
[9]   Raman scattering studies on single-crystalline bulk AlN under high pressures [J].
Kuball, M ;
Hayes, JM ;
Prins, AD ;
van Uden, NWA ;
Dunstan, DJ ;
Shi, Y ;
Edgar, JH .
APPLIED PHYSICS LETTERS, 2001, 78 (06) :724-726
[10]  
Levinstein M. E., 2001, PROPERTIES ADV SEMIC