A 1.75GHz inductor-less CMOS low noise amplifier with high-Q active inductor load

被引：0
|
作者：
Yang, JN [1 ]
Cheng, YC [1 ]
Hsu, TY [1 ]
Hsu, TR [1 ]
Lee, CY [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
PROCEEDINGS OF THE 44TH IEEE 2001 MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2 | 2001年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A 1.75GHz CMOS inductor-less low noise amplifier with high-Q active inductor load using 0.35um. standard CMOS digital process is presented. In this low noise amplifier, the compact tunable high-Q active inductor load is connected to the common-gate configuration to improve the performance of the high power gain, low power consumption and simple matching characteristics. Not using any passive components is to reduce the area of chip and the complexity. HSPICE simulation has been performed to verify the performance of the designed low noise amplifier. It has been shown that the amplifier has a power gain of 24dB(S21), S11 of -31dB, S12 of -38.5dB and S22 of -21.4dB under 3.3V power supply with 9.3mW power consumption around at 1.75GHz center frequency. The experimental chip fabricated occupies 0.057x0.056 mm(2) chip area.
引用
收藏
页码：816 / 819
页数：4
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