Reliability of GaN-Based HEMT Devices

被引：0

作者：

Menozzi, Roberto ^{[1
]}

机构：

[1] Univ Parma, Dept Informat Engn, I-43100 Parma, Italy

来源：

COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年

关键词：

gallium nitride; nitride devices; HEMTs; reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated "current collapse". The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.

引用

页码：44 / 50

页数：7

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