Reliability of GaN-Based HEMT Devices

被引：0
作者：
Menozzi, Roberto [1 ]
机构：
[1] Univ Parma, Dept Informat Engn, I-43100 Parma, Italy
来源：
COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年
关键词：
gallium nitride; nitride devices; HEMTs; reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated "current collapse". The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.
引用
收藏
页码：44 / 50
页数：7
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