Tunnel junctions with yttrium oxide barrier and various ferromagnetic electrodes

被引：5

作者：

Dimopoulos, T ^{[1
]}

Gieres, G

Colis, S

Lopez, R

Vieth, M

Wecker, J

Luo, YS

Samwer, K

机构：

[1] Siemens AG, CT MM1, D-91052 Erlangen, Germany

[2] Inst Phys & Chim Mat, F-67000 Strasbourg, France

[3] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 04期

关键词：

magnetic memories; magnetic sensors; magnetic thin-film devices; tunneling;

D O I：

10.1109/TMAG.2004.829282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work concerns tunnel junctions with yttrium oxide barrier prepared by plasma oxidation of a 1.5-nm Y film. The magnetoresistive properties of the junctions were studied as a function of the ferromagnetic (FM) electrodes in contact with the barrier, such as CoFe, Py (permalloy), and CoFeNiSiB. The maximum measured tunnel magnetoresistance (TMR) effect was 25% at room temperature-raised to over 40 % at 5 K. The TMR and the tunnel barrier characteristics (thickness, height, and asymmetry) depend significantly on the FM electrodes and the annealing temperature. Barrier heights of less than 1 eV have been extracted in all cases -two to three times lower than the ones reported for AlOx-based junctions.

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页码：2296 / 2298

页数：3

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