Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering

被引：7

作者：

Guerra, L. M. ^{[1
,2
,3
]}

Dias, C. ^{[1
,2
,3
]}

Pereira, J. ^{[4
,5
]}

Lv, H. ^{[4
,5
]}

Cardoso, S. ^{[4
,5
]}

Freitas, P. P. ^{[4
,5
]}

Ventura, J. ^{[1
,2
,3
]}

机构：

[1] Univ Porto, IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal

[2] Univ Porto, IN, Rua Campo Alegre 678, P-4169007 Oporto, Portugal

[3] Univ Porto, Dept Phys & Astron, Fac Sci, Rua Campo Alegre 678, P-4169007 Oporto, Portugal

[4] Inst Nanosci & Nanotechnol, INESC MN, Rua Alves Redol 9, P-1000029 Lisbon, Portugal

[5] Inst Nanosci & Nanotechnol, IN, Rua Alves Redol 9, P-1000029 Lisbon, Portugal

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 01期

关键词：

Memristors; Magnesium Oxide; Magnetron Sputtering; Resistive Switching; MEMRISTORS; DEVICES; FILMS;

D O I：

10.1166/jnn.2017.12333

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (10(1) Omega) and OFF (10(2) Omega) states during at least 10(4) s.

引用

页码：564 / 567

页数：4

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