On the effective sputter yield during magnetron sputter deposition

被引：25
作者：
Depla, D. [1 ]
机构：
[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 328卷
关键词：
Sputter yield; Magnetron; Modelling; DISCHARGE VOLTAGE; TARGET; REDEPOSITION; SIMULATION; ARGON; IONS;
D O I：
10.1016/j.nimb.2014.03.001
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effective sputter yield during magnetron sputtering of elemental targets was measured by weighing the target before and after sputtering at constant discharge voltage. During the experiment, the pressure and discharge current were logged. The effective sputter yield is compared with a set of published semiempirical equations to calculate the sputter yield for ion/solid interactions. The differences between both yields are discussed based on different contributions which affect the effective sputter yield such as redeposition, the target roughness and the contribution of high energetic neutrals. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：65 / 69
页数：5
相关论文
共 23 条
[1]   A UNIVERSAL RELATION FOR THE SPUTTERING YIELD OF MONATOMIC SOLIDS AT NORMAL ION INCIDENCE [J].
BOHDANSKY, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :587-591
[2]   The influence of target surface morphology on the deposition flux during direct-current magnetron sputtering [J].
Boydens, F. ;
Leroy, W. P. ;
Persoons, R. ;
Depla, D. .
THIN SOLID FILMS, 2013, 531 :32-41
[3]   Deposition of thin films by sputtering cold isostatically pressed powder targets: A case study [J].
Boydens, Francis ;
Leroy, Wouter ;
Persoons, Rosita ;
Depla, Diederik .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03) :524-530
[4]   Reactive sputter deposition of TiNx films, simulated with a particle-in-cell/Monte Carlo collisions model [J].
Bultinck, E. ;
Mahieu, S. ;
Depla, D. ;
Bogaerts, A. .
NEW JOURNAL OF PHYSICS, 2009, 11
[5]   Effect of resonance charge exchange between argon ions on the effective sputtering rate in a magnetron discharge [J].
Burmakinskii, IY ;
Rogov, AV .
TECHNICAL PHYSICS, 2004, 49 (01) :119-122
[6]   INCIDENT ION ENERGY-SPECTRUM AND TARGET SPUTTERING RATE IN DC PLANAR MAGNETRON [J].
CZEKAJ, D ;
GORANCHEV, B ;
HOLLMANN, EK ;
VOLPYAS, VA ;
ZAYTSEV, AG .
VACUUM, 1991, 42 (1-2) :43-45
[7]   Discharge voltage measurements during magnetron sputtering [J].
Depla, D ;
Buyle, G ;
Haemers, J ;
De Gryse, R .
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (14-15) :4329-4338
[8]   Magnetron sputter deposition as visualized by Monte Carlo modeling [J].
Depla, D. ;
Leroy, W. P. .
THIN SOLID FILMS, 2012, 520 (20) :6337-6354
[9]   Cross section for removing chemisorbed oxygen from an aluminum target by sputtering [J].
Depla, D ;
De Gryse, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (02) :521-525
[10]   Magnetron sputter deposition: Linking discharge voltage with target properties [J].
Depla, D. ;
Mahieu, S. ;
De Gryse, R. .
THIN SOLID FILMS, 2009, 517 (09) :2825-2839
123