Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method

被引：0

作者：

Gurbulak, Bekir ^{[1
]}

Sata, Mehmet ^{[1
]}

Ashkhasi, Afsoun ^{[1
]}

Yildirim, Muhammet ^{[1
]}

Duman, Songul ^{[2
]}

机构：

[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey

[2] Erzurum Tech Univ, Fac Sci, Dept Basic Sci, TR-25050 Erzurum, Turkey

来源：

PROCEEDINGS OF THE TURKISH PHYSICAL SOCIETY 32ND INTERNATIONAL PHYSICS CONGRESS (TPS32) | 2017年 / 1815卷

关键词：

OPTICAL-PROPERTIES; GALLIUM-SELENIDE;

D O I：

10.1063/1.4976476

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependence of current voltage (I-V) characteristics of Au Ge/p-GaSe:Cd Schottky diode (SD) has been investigated in the temperature range of 40-360 K with a temperature step of 10 K under dark conditions. The characteristic parameters of the SD such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. It has been shown that the ideality factor increases while the barrier height decreases with decreasing temperature. The values of series resistance obtained from modified Norde's function. Series resistance values increase with decreasing temperature.

引用

页数：4

共 14 条

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