Plasmonic Lithography: Recent Progress

被引:57
作者
Hong, Fan [1 ]
Blaikie, Richard [1 ]
机构
[1] Univ Otago, Dept Phys, MacDiarmid Inst Adv Mat & Nanotechnol, Dodd Walls Ctr Quantum & Photon Technol, POB 56, Dunedin 9054, New Zealand
关键词
diffraction limit; evanescent near fields; metamaterials; nanostructures; plasmonic lithography; subwavelength optics; HIGH-ASPECT-RATIO; SUBWAVELENGTH INTERFERENCE LITHOGRAPHY; NEAR-FIELD; NM FEATURES; NANOIMPRINT LITHOGRAPHY; IMAGING LITHOGRAPHY; OPTICAL LITHOGRAPHY; FABRICATION; NANOLITHOGRAPHY; GENERATION;
D O I
10.1002/adom.201801653
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Plasmonic lithography has received extensive attention as both a potential candidate for next generation lithography and as an interesting testbed to test the fundamental resolution limits of optical imaging and patterning. Owing to the utilization of the otherwise lost evanescent near fields containing high frequency information, surface plasmon-based lithographic techniques can break the diffraction limit in conventional photolithography; resolution down to approximately 20 nm using visible light has been experimentally demonstrated, and theoretical studies have analyzed methods that have the potential for creating nanopatterns with sub-10 nm resolution. This paper reviews the research progress and various modalities of plasmonic lithography, addresses current obstacles and problems, and provides an outlook for practical application.
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页数:16
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