Oxygen diffusion and reactions in Hf-based dielectrics

被引：31

作者：

Goncharova, L. V.

Dalponte, M.

Starodub, D. G.

Gustafsson, T.

Garfunkel, E.

Lysaght, P. S.

Foran, B.

Barnett, J.

Bersuker, G.

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Dept Chem & Chem Biol, Piscataway, NJ 08854 USA

[4] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA

[5] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2221522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with O-18(2) isotopic tracing methods. Postgrowth oxidation of Hf-based films in an O-18(2) atmosphere at 490-950 degrees C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO2 phase segregation. (c) 2006 American Institute of Physics.

引用

页数：3

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