Droplet epitaxy of GaAs quantum dots on (001), vicinal (001), (110), and (311)A GaAs

被引：14

作者：

Heyn, Ch. ^{[1
]}

Stemmann, A.

Schramm, A.

Hansen, W.

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Diffusion; Low-dimensional structures; Atomic force microscopy; Molecular beam epitaxy; Semiconducting III-V materials; SELF-ORGANIZED GROWTH; INGAAS;

D O I：

10.1016/j.jcrysgro.2008.10.055

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the formation of GaAs quantum dots (QDs) by droplet epitaxy on various GaAs surfaces. The fabrication process consists of two steps. First, liquid Ga droplets are grown in a Volmer-Weber-like mode. This is followed by crystallization under As pressure. We demonstrate fabrication of droplet epitaxial GaAs QDs on (0 0 1), vicinal (0 0 1), (110), and (3 1 1)A GaAs Surfaces. On (3 1 1)A GaAs, QDs are formed with higher density and smaller height compared to (0 0 1) and (1 1 0), which is attributed to a higher energy barrier for surface diffusion. Values of the surface diffusion barrier are determined and its influence on temperature-dependent QD density is studied by means of a QD growth model. On vicinal (0 0 1) surfaces, step bunches are found to act as preferred nucleation sites for GaAs QDs which opens the possibility for a lateral positioning of the QDs by pre-patterning. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1825 / 1827

页数：3

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