The effect of growth parameters on the position of the melt-solid interface in Bridgman growth of indium antimonide

被引：2
|
作者：
Venkataraghavan, R [1 ]
Rao, KSRK [1 ]
Bhat, HL [1 ]
机构：
[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 17期
关键词：
D O I：
10.1088/0022-3727/30/17/001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of growth parameters on the position of the interface in the melt growth of indium antimonide by vertical solidification has been studied. It has been observed that the interface deviates from the expected position of the melting-point isotherm. It was found that the growth parameters play a vital role in moving the S/L interface on either side of the melting-point isotherm, suggesting that the growth occurs under off-stoichiometric conditions. By choosing the optimized growth conditions, it has been possible to grow InSb single crystals with stoichiometric composition.
引用
收藏
页码：L61 / L63
页数：3
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