Structure and stability of Si(114)-(2x1)

被引:80
作者
Erwin, SC
Baski, AA
Whitman, LJ
机构
[1] Naval Research Laboratory, Washington, DC
关键词
D O I
10.1103/PhysRevLett.77.687
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe a recently discovered stable planar surface of silicon,-Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2 x 1 reconstruction. We propose a complete model for the reconstructed surface based on scanning tunneling microscopy images and first-principles total-energy calculations. The structure and stability of Si(114)-(2 x 1) arises from a balance between surface dangling bond reduction and surface stress relief, and provides a key to understanding the morphology of a family of surfaces oriented between (001) and (114).
引用
收藏
页码:687 / 690
页数:4
相关论文
共 15 条
[1]  
ADAMS DP, 1994, MATER RES SOC SYMP P, V317, P35
[2]   FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].
ALERHAND, OL ;
BERKER, AN ;
JOANNOPOULOS, JD ;
VANDERBILT, D ;
HAMERS, RJ ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2406-2409
[3]   A STABLE HIGH-INDEX SURFACE OF SILICON - SI(5 5 12) [J].
BASKI, AA ;
ERWIN, SC ;
WHITMAN, LJ .
SCIENCE, 1995, 269 (5230) :1556-1560
[4]   QUASI-PERIODIC NANOSCALE FACETING OF HIGH-INDEX SI SURFACES [J].
BASKI, AA ;
WHITMAN, LJ .
PHYSICAL REVIEW LETTERS, 1995, 74 (06) :956-959
[5]   STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694
[6]   ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663
[7]   SCANNING-TUNNELING-MICROSCOPY ON CONCAVE-SHAPED SI(100) SUBSTRATES [J].
HANBUCKEN, M ;
ROTTGER, B ;
NEDDERMEYER, H .
SURFACE SCIENCE, 1995, 331 :1028-1032
[8]   STRUCTURE OF SI(113) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
KNALL, J ;
PETHICA, JB ;
TODD, JD ;
WILSON, JH .
PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1733-1736
[9]  
MEADE RD, 1989, ATOMIC SCALE CALCULA, P451
[10]   ATTRACTIVE STEP-STEP INTERACTIONS, TRICRITICALITY, AND FACETING IN THE ORIENTATIONAL PHASE-DIAGRAM OF SILICON SURFACES BETWEEN [113] AND [114] [J].
SONG, S ;
MOCHRIE, SGJ .
PHYSICAL REVIEW B, 1995, 51 (15) :10068-10084