Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

被引：45

作者：

Arya, Sandeep ^{[1
]}

Sharma, Asha ^{[1
]}

Singh, Bikram ^{[1
]}

Riyas, Mohammad ^{[1
]}

Bandhoria, Pankaj ^{[2
]}

Aatif, Mohammad ^{[3
]}

Gupta, Vinay ^{[3
]}

机构：

[1] Univ Jammu, Dept Phys, Jammu 180006, J&K, India

[2] Govt Gandhi Mem Sci Coll, Dept Phys, Jammu 180001, J&K, India

[3] Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India

来源：

OPTICAL MATERIALS | 2018年 / 79卷

关键词：

Cu-doped CdS nanoparticles; p-CdS/n-ZnO heterojunction; Sol-gel method; Photo-response; PHOTODEGRADATION; PURE; BLUE; DYE;

D O I：

10.1016/j.optmat.2018.03.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nano particles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (-1 V to + 1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 mu W/cm(2). Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

引用

页码：115 / 119

页数：5

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