Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

被引：5

作者：

Maksimov, O. ^{[1
]}

Gong, Y.

Du, H.

Fisher, P.

Skowronski, M.

Kuskovsky, I. L.

Heydemann, V. D.

机构：

[1] Penn State Univ, Ctr Electroopt, Freeport, PA 16229 USA

[2] CUNY Queens Coll, Dept Phys, Flushing, NY 11367 USA

[3] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

来源：

VACUUM | 2006年 / 80卷 / 09期

关键词：

molecular beam epitaxy; GaN; GaAs; PHOTOLUMINESCENCE; TEMPERATURE;

D O I：

10.1016/j.vacuum.2006.01.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN films are grown on [001] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented alpha-GaN. Photoluminescence studies show that the emission from cubic beta-GaN inclusions dominates the spectrum. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1042 / 1045

页数：4

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