Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

被引：5
作者：
Maksimov, O. [1 ]
Gong, Y.
Du, H.
Fisher, P.
Skowronski, M.
Kuskovsky, I. L.
Heydemann, V. D.
机构：
[1] Penn State Univ, Ctr Electroopt, Freeport, PA 16229 USA
[2] CUNY Queens Coll, Dept Phys, Flushing, NY 11367 USA
[3] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
来源：
VACUUM | 2006年 / 80卷 / 09期
关键词：
molecular beam epitaxy; GaN; GaAs; PHOTOLUMINESCENCE; TEMPERATURE;
D O I：
10.1016/j.vacuum.2006.01.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN films are grown on [001] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented alpha-GaN. Photoluminescence studies show that the emission from cubic beta-GaN inclusions dominates the spectrum. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1042 / 1045
页数：4
相关论文
共 16 条
  • [1] The nature of arsenic incorporation in GaN
    Bell, A
    Ponce, FA
    Novikov, SV
    Foxon, CT
    Harrison, I
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3239 - 3241
  • [2] Optimized growth conditions for the epitaxial nucleation of beta-GaN on GaAs(001) by molecular beam epitaxy
    Brandt, O
    Yang, H
    Trampert, A
    Wassermeier, M
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (04) : 473 - 475
  • [3] Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy
    Brandt, O
    Muralidharan, R
    Thamm, A
    Waltereit, P
    Ploog, KH
    [J]. APPLIED SURFACE SCIENCE, 2001, 175 : 419 - 427
  • [4] FEN R, 2003, WIDE BANDGAP ELECT D
  • [5] Georgakilas A, 1999, PHYS STATUS SOLIDI A, V176, P525, DOI 10.1002/(SICI)1521-396X(199911)176:1<525::AID-PSSA525>3.0.CO
  • [6] 2-M
  • [7] Jiang HX, 2002, OPTO-ELECTRON REV, V10, P271
  • [8] Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF-MBE
    Kimura, R
    Suzuki, T
    Ouchi, M
    Ishida, K
    Takahashi, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 411 - 414
  • [9] Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
    Mah, KW
    Mosnier, JP
    McGlynn, E
    Henry, MO
    O'Mahony, D
    Lunney, JG
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3301 - 3303
  • [10] MAKSIMOV O, 2005, N AM MBE C SANT BARB
12