Dose rate effects in bipolar oxides: Competition between trap filling and recombination

被引：46
作者：
Boch, J. [1 ]
Saigne, F.
Touboul, A. D.
Ducret, S.
Carlotti, J. -F.
Bernard, M.
Schrimpf, R. D.
Wrobel, F.
Sarrabayrouse, G.
机构：
[1] Univ Montpellier 2, CEM2, UMR CNRS 5507, F-34095 Montpellier 5, France
[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[3] Univ Nice, LPES, CRESA, EA1174, F-06108 Nice 2, France
[4] CNRS, LAAS, F-31077 Toulouse 04, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期
关键词：
D O I：
10.1063/1.2210293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Predicting the low-dose-rate degradation of bipolar technologies is one of the main issues for circuits intended for use in the ionizing-radiation environment of space because of the enhanced low-dose-rate sensitivity (ELDRS). In this letter, ELDRS is shown to be related to competition between trapping and recombination of radiation-induced carriers in the oxide. The presented model is shown to be in good agreement with experimental data. It is also shown that this effect is strongly dependent-on the oxide quality. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 30 条
[1]   Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors [J].
Belyakov, VV ;
Pershenkov, VS ;
Shalnov, AV ;
ShvetzovShilovsky, IN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1660-1666
[2]   Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature [J].
Boch, J ;
Saigné, E ;
Maurel, T ;
Giustino, F ;
Dusseau, L ;
Schrimpf, RD ;
Galloway, KE ;
David, JP ;
Ecoffet, R ;
Fesquet, J ;
Gasiot, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) :1474-1479
[3]   TIME-DEPENDENT HOLE AND ELECTRON TRAPPING EFFECTS IN SIMOX BURIED OXIDES [J].
BOESCH, HE ;
TAYLOR, TL ;
HITE, LR ;
BAILEY, WE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1982-1989
[4]   SOLUTION OF THE KINETIC-EQUATIONS GOVERNING TRAP FILLING - CONSEQUENCES CONCERNING DOSE DEPENDENCE AND DOSE-RATE EFFECTS [J].
CHEN, R ;
MCKEEVER, SWS ;
DURRANI, SA .
PHYSICAL REVIEW B, 1981, 24 (09) :4931-4944
[5]   Nonlinear dose dependence and dose-rate dependence of optically stimulated luminescence and thermoluminescence [J].
Chen, R ;
Leung, PL .
RADIATION MEASUREMENTS, 2001, 33 (05) :475-481
[6]  
Durrani S. A., 1978, EUROP PACT J, V2, P200
[7]   RESPONSE OF ADVANCED BIPOLAR PROCESSES TO IONIZING-RADIATION [J].
ENLOW, EW ;
PEASE, RL ;
COMBS, W ;
SCHRIMPF, RD ;
NOWLIN, RN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1342-1351
[8]   PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATION AT LOW-DOSE RATES [J].
FLEETWOOD, DM ;
KOSIER, SL ;
NOWLIN, RN ;
SCHRIMPF, RD ;
REBER, RA ;
DELAUS, M ;
WINOKUR, PS ;
WEI, A ;
COMBS, WE ;
PEASE, RL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1871-1883
[9]   Study of low-dose-rate radiation effects on commercial linear bipolar ICs [J].
Freitag, RK ;
Brown, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2649-2658
[10]   Physical characterization of electron trapping in Unibond® oxides [J].
Gruber, O ;
Paillet, P ;
Musseau, O ;
Marcandella, C ;
Aspar, B ;
Auberton-Herve, AJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) :1402-1406
123