Low Power and High Density Magnetic Flash Analog to Digital Converter using spintronic devices and CMOS

被引:0
作者
Upadhyaya, Yogendra Kumar [1 ]
Hasan, Mohd. [1 ]
Maheshwari, Sudhanshu [1 ]
机构
[1] Aligarh Muslim Univ, Aligarh, Uttar Pradesh, India
来源
PROCEEDINGS OF THE 2017 INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES (IMPACT) | 2017年
关键词
Domain wall motion; DW; MTJ; Analog to Digital Converter (ADC); Spintronics; ADC;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic tunnel junction (MTJ) and current induced domain wall motion in magnetic strip are used as a comparator of a flash ADC. This flash ADC has good performance in terms of power consumption and area because it uses spintronic devices in conjunction with CMOS. Motion of domain-wall (DW) in magnetic strip is a promising technique to save area and power without degrading speed. This paper proposes an energy and area efficient flash ADC based on a comparator constructed using Domain wall motion in a magnetic strip and MTJ. It has less area and power consumption than other ADCs. This 5-bit Flash ADC can operate at 250MS/s with power consumption of 1.15mW. Verilog-A Compact model is used for the domain wall and MTJ and simulation has been carried out with Cadence design tools using PDK CMOS 45nm design Kit. The results are then compared with conventional ADCs.
引用
收藏
页码:237 / 241
页数:5
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