Top-Down Fabrication Process of ZnO NWFETs

被引：2
作者：
Ditshego, N. M. J. [1 ]
Sultan, S. M. [2 ]
机构：
[1] BIUST, CET, Elect Comp & Telecommun Engn Dept, Private Bag 16, Palapye, Botswana
[2] Univ Teknol Malaysia, Sch Elect Engn FKE, Utm Skudai 81310, Johor Darul Tak, Malaysia
来源：
JOURNAL OF NANO RESEARCH | 2019年 / 57卷
基金：
英国工程与自然科学研究理事会;
关键词：
depletion mode; enhancement mode; field effect transistor; nanowire; remote plasma atomic layer deposition (RPALD); passivation; ZnO zinc oxide; device; nanosensor; FIELD-EFFECT TRANSISTORS; PERFORMANCE;
D O I：
10.4028/www.scientific.net/JNanoR.57.77
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 10(18) cm(-3) for the thin film, contact resistance values were lowered (passivated device had R-con = 2.5 x 10(4) Omega; unpassivated device had R-con = 3.0 x 10(5) Omega). By depositing Zn first instead of O-2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225 mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behaved electrical characteristics have been obtained and the passivated device shows field effect mobility of 10.9 cm(2)/Vs and the un-passivated device shows a value of 31.4 cm(2)/Vs. To verify the results, 3D simulation was also carried out which shows that the obtained values of sub-threshold slope translate into interface state number densities of -1.86 x 10(13) cm(-2) for the unpassivated device and 3.35 x 10(14) cm(-2) for the passivated device. The passivated device is suitable for biosensing applications.
引用
收藏
页码：77 / 92
页数：16
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