Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs

被引:1
作者
Sergeev, V. A. [1 ]
Khodakov, A. M. [1 ]
机构
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Ulyanovsk Branch, Ulyanovsk 432011, Russia
关键词
LIGHT-EMITTING-DIODES;
D O I
10.1134/S1064226915080161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thermoelectric model of a high-power heterojunction LED is developed, and the distributions of temperature and current density in the LED structure are obtained with allowance for several effects of thermal feedback. It is demonstrated that the dependence of the quantum efficiency on the current density and temperature leads to a significant nonuniformity of the temperature and current-density distributions in the LED structure. The calculated results are proven by the experimental dependences of the junction-housing thermal resistances of particular LEDs on the current. The Comsol Multiphysics simulation medium is interactively involved in the calculation and analysis of the temperature and current-density distributions in the LED structure with a thermophysical macrodefect in the approximation of the local thermal feedback. A critical size of the macrodefect that corresponds to the maximum nonuniformity of the thermal distribution is obtained.
引用
收藏
页码:1328 / 1332
页数:5
相关论文
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