Novel SiC Zener diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2

被引：3

作者：

Ishii, R. ^{[1
]}

Nakayama, K. ^{[1
]}

Tsuchida, H. ^{[2
]}

Sugawara, Y. ^{[1
]}

机构：

[1] Kansai Elect Power Co Inc, 3-11-2 Nakoji, Amagasaki, Hyogo 6610974, Japan

[2] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4H-SiC; Zener diode; High temperature; High power; AVALANCHE BREAKDOWN; DEPENDENCE;

D O I：

10.4028/www.scientific.net/MSF.600-603.1015

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm, x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7x10(-5) I/K (positive) in the temperature range 20-300 degrees C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm(2)) at 20 degrees C and 6.0 kW (38 kW/cm(2)) at 300 degrees C during rectangular pulsed power operation (t(w) = 1 ms) have been achieved without device failure.

引用

页码：1015 / +

页数：2

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