Origin of anomalous temperature dependence of the Nernst effect in narrow-gap semiconductors

被引：6
作者：
Masuki, Ryota [1 ]
Nomoto, Takuya [1 ]
Arita, Ryotaro [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] RIKEN Ctr Emergent Matter Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
来源：
PHYSICAL REVIEW B | 2021年 / 103卷 / 04期
基金：
日本科学技术振兴机构;
关键词：
PHONON-DRAG; THERMOELECTRIC-POWER; BULK;
D O I：
10.1103/PhysRevB.103.L041202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Based on the Boltzmann transport theory, we study the origin of the anomalous temperature dependence of the Nernst coefficient (nu) due to the phonon-drag mechanism. For narrow-gap semiconductors, we find that there are two characteristic temperatures at which a noticeable peak structure appears in nu. Contrarily, the Seebeck coefficient (S) always has only one peak. While the breakdown of the Sondheimer cancellation due to the momentum dependence of the electron relaxation time is essential for the peak in nu at low T, the contribution of the valence band to the phonon-drag current is essential for the peak at higher T. By considering this mechanism, we successfully reproduce nu and S of FeSb2, for which a gigantic phonon-drag effect is observed experimentally.
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页数：5
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