FEATURES OF NON-LITHOGRAPHIC FORMATION OF PERIODICAL NANOSTRUCTURES ON SILICON

被引：0
|
作者：
Belov, A. N. [1 ]
Demidov, Yu. A. [1 ]
Shevyakov, V. I. [1 ]
Redichev, E. N. [2 ]
机构：
[1] Tech Univ, Moscow Inst Elect Technol, Moscow, Russia
[2] Res & Mfg Firm NanoInTech, Honolulu, HI 96813 USA
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES | 2009年
关键词：
TEMPLATE;
D O I：
10.1142/9789814280365_0115
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Technological features of nanoprofiling of silicon protected by a solid mask made of porous aluminum oxide are considered. it is shown that the method based on bombarding structures with accelerated neutral atoms (in particular, argon atoms) is efficient for etching through this mask.
引用
收藏
页码：483 / +
页数：2
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