Degradation mechanism of GaAsPHEMT power amplifiers under elevated temperature lifetest with RF-overdrive

被引：3

作者：

Chou, YC ^{[1
]}

Lai, R ^{[1
]}

Grundbacher, R ^{[1
]}

Yu, M ^{[1
]}

Leung, D ^{[1
]}

Callejo, L ^{[1
]}

Eng, D ^{[1
]}

Okazaki, D ^{[1
]}

Yamane, B ^{[1
]}

Kiyono, K ^{[1
]}

Kan, Q ^{[1
]}

Oki, A ^{[1
]}

机构：

[1] Northrop Grumman Space Technol, Redondo Beach, CA 90278 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation mechanism of 0.15 mum GaAs PHEMTs subjected to three-temperature elevated lifetest (T-1=185degreesC, T-2=200degreesC, and T-3=215degreesC ambient temperatures in N-2 atmosphere and stressed at Vds=5V/Ids=250 mA/mm) under RF-overdfive at 20 GHz was investigated. The results show that Pout degradation is due to Ids degradation induced by Ti gate metal interdiffusion into the AlGaAs Schottky barrier layer. However, DeltaImax, DeltaGmp, and Ti interdiffusion depth depend on the RF-drive levels. Accordingly, a distinct difference of reliability performance between DC (no RF-overdrive) and RF-overdrive lifetests was demonstrated. It has been found that both DC and RF-overdrive lifetests exhibit similar activation energy, which is approximately 1.65 eV. However, the mean-time-to-failure (MTTF) of RF-overdfive lifetest is inferior to that of DC lifetest. The difference is attributed to the higher electric field present in the RF-overdriven lifetest.

引用

页码：463 / 468

页数：6

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