Linking sensors with telemetry: Impact on the system design

被引:13
作者
Puers, R
机构
[1] Katholieke Universiteit Leuven, ESAT-MICAS, B-3001 Heverlee
关键词
telemetry; low power consumption; microsystems; hybrids and interconnection; intelligent systems;
D O I
10.1016/0924-4247(96)80144-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper focuses on typical aspects in the design of telemetry systems. The most prominent is the low power consumption; in most cases, miniaturization comes second. Silicon technology can offer interesting perspectives for sensor development and some examples are highlighted. However, the transmission itself is also a key element in terms of power consumption, such that sensor interfacing, signal processing, data handling and data transmission also become key parameters in the total system design. It is emphasized that both the low power consumption and transmission need to be thoroughly matched.
引用
收藏
页码:169 / 174
页数:6
相关论文
共 32 条
  • [21] SANSEN W, 1984, P INT MICR C TOK JAP, P406
  • [22] RESONANT DIAPHRAGM PRESSURE MEASUREMENT SYSTEM WITH ZNO ON SI EXCITATION
    SMITS, JG
    TILMANS, HAC
    HOEN, K
    MULDER, H
    VANVUUREN, J
    BOOM, G
    [J]. SENSORS AND ACTUATORS, 1983, 4 (04): : 565 - 571
  • [23] Stemme G., 1991, Journal of Micromechanics and Microengineering, V1, P113, DOI 10.1088/0960-1317/1/2/004
  • [24] MICRO RESONANT FORCE GAUGES
    TILMANS, HAC
    ELWENSPOEK, M
    FLUITMAN, JHJ
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1992, 30 (1-2) : 35 - 53
  • [25] SILICON DIFFUSED-ELEMENT PIEZORESISTIVE DIAPHRAGMS
    TUFTE, ON
    LONG, D
    CHAPMAN, PW
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3322 - &
  • [26] URA N, 1991, 10 SENS S, P41
  • [27] VANSCHUYLENBERG.K, 1991, 1 EUR C BIOM ENG NIC, P194
  • [28] WISE KD, 1991, 6TH INT C SOL STAT S, P2
  • [29] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS .2. GENERATION-RECOMBINATION CURRENT
    WORTMAN, JJ
    HAUSER, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3527 - &
  • [30] WORTMANN J, IEEE T ELECTRON DEV, V16, P855