V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators

被引:43
作者
Floyd, BA [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年
关键词
bipolar integrated circuits; bipolar transistor amplifiers; millimeter wave amplifiers; millimeter wave oscillators; MMICs; voltage controlled oscillators;
D O I
10.1109/RFIC.2004.1320601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
LNAs and VCOs operating between 50 and 86 GHz have been implemented using a 0.12-mum, 200-GHz SiGe bipolar technology. Unbalanced LNAs at 50, 60, and 77 GHz show similar to15 dB of gain, drawing 2, 6, and 8 mA from 1.8 V, respectively. The iCP(1dB) for the LNAs are from -17 to -20 dBm. Noise figure of the 60-GHz LNA is 4.5 dB. Balanced amplifiers composed of two parallel LNAs with branch-line couplers at the input and output have also been demonstrated at 60 and 77 GHz, showing 14 and 12-dB gain, respectively. Differential Colpitts VCOs have been implemented at 53, 67, and 85 GHz. Phase noises at a 1-MHz offset are -100, -98, and -94 dBc/Hz, respectively, while tuning ranges are 3.7%, 3.1%, and 2.7%. Each VCO consumes roughly 25 mW, and provides -8 dBm output power to 100Ohm differential.
引用
收藏
页码:295 / 298
页数:4
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