Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures

被引：0
作者：
Zander, Marlene [1 ]
Nishinaga, Jiro [1 ]
Gotoh, Hideki [2 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan
[2] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期
关键词：
nanostructures; migration enhanced epitaxy; molecular beam epitaxy; selective epitaxy; semiconducting indium compounds; MIGRATION-ENHANCED EPITAXY; AREA-SELECTIVE EPITAXY; PYRAMIDS;
D O I：
10.1002/pssc.201300274
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a study of the site-controlled nucleation of InAs quantum dots on faceted GaAs microstructures grown by migration enhanced epitaxy and demonstrate single quantum dot emission. Well defined GaAs templates with facets mostly belonging to the crystal plane families {01n}, {11n} and (001) are realized. Subsequent InAs nucleation occurs on the plane with the highest growth rate, and allows a precise positioning of optical active InAs quantum dots. The site-controlled quantum dots reveal excitonic and biexcitonic transitions with narrow linewidths. The results are promising for the realization of single photon sources from site-selected InAs QDs on faceted GaAs microstructures. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1500 / 1504
页数：5
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