Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications

被引：35

作者：

Ahsan, Sheikh Aamir ^{[1
]}

Ghosh, Sudip ^{[1
]}

Khandelwal, Sourabh ^{[2
]}

Chauhan, Yogesh Singh ^{[1
]}

机构：

[1] IIT Kanpur, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India

[2] Macquarie Univ, Dept Sci & Engn, Sydney, NSW 2109, Australia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期

关键词：

Capacitance; cross-coupling; GaN HEMTs; mixed-mode; substrate; switching; ALGAN/GAN HEMTS; CIRCUIT;

D O I：

10.1109/TED.2017.2654264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a capacitance model for field-plate AlGaN/GaN High Electron Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and cross-coupling between field plates. TCAD simulations are performed to analyze both these contributions and analytical expressions for charges corresponding to the cross-coupling and substrate capacitances are presented in terms of our existing surface-potential-based model. The modeled results are validated by comparing the time domain waveforms of a test circuit using a mixed-mode simulation setup in which the impact of cross-coupling and substrate capacitances on accuracy of switching transients predicted by the model is discussed.

引用

页码：816 / 823

页数：8

共 32 条

[1]

Ahsan S., 2016, ASMHEMT MODEL RF POW

[2] Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior [J].

Ahsan, Sheikh Aamir ;

Ghosh, Sudip ;

Sharma, Khushboo ;

Dasgupta, Avirup ;

Khandelwal, Sourabh ;

Chauhan, Yogesh Singh .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (02) :565-572

[3] Electron transport characteristics of GaN for high temperature device modeling [J].

Albrecht, JD ;

Wang, RP ;

Ruden, PP ;

Farahmand, M ;

Brennan, KF .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4777-4781

[4] AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs) [J].

Bahat-Treidel, Eldad ;

Hilt, Oliver ;

Brunner, Frank ;

Sidorov, Victor ;

Wuerfl, Joachim ;

Traenkle, Guenther .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (06) :1208-1216

[5] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457

[6] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[7] 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic ON-Resistance [J].

Chu, Rongming ;

Corrion, Andrea ;

Chen, Mary ;

Li, Ray ;

Wong, Danny ;

Zehnder, Daniel ;

Hughes, Brian ;

Boutros, Karim .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :632-634

[8] Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure [J].

Cucak, Dejana ;

Vasic, Miroslav ;

Garcia, Oscar ;

Angel Oliver, Jesus ;

Alou, Pedro ;

Antonio Cobos, Jose ;

Wang, Ashu ;

Martin-Horcajo, Sara ;

Fatima Romero, Maria ;

Calle, Fernando .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (03) :2189-2202

[9] High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates [J].

Dora, Y. ;

Chakraborty, A. ;

McCarthy, L. ;

Keller, S. ;

DenBaars, S. P. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :713-715

[10] Silicon carbide benefits and advantages for power electronics circuits and systems [J].

Elasser, A ;

Chow, TP .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :969-986

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