Physical properties of amorphous InGaZnO4 films doped with Mn

被引：18
作者：
Liu, Shiu-Jen [1 ,4 ]
Fang, Hau-Wei [3 ]
Su, Shih-Hao [2 ]
Li, Chia-Hung [2 ]
Cherng, Jyh-Shiarn [3 ]
Hsieh, Jang-Hsing [3 ]
Juang, Jenh-Yih [2 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Math & Sci Precoll, Taipei 244, Taiwan
[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
[3] Mingchi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan
[4] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期
关键词：
amorphous semiconductors; carrier density; carrier mobility; doping profiles; electrical resistivity; ferromagnetic materials; gallium compounds; indium compounds; magnetic thin films; magnetisation; manganese; optical constants; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; visible spectra; wide band gap semiconductors; ROOM-TEMPERATURE; THIN-FILMS; MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; ZNO; OXIDES;
D O I：
10.1063/1.3095505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.
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页数：3
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