Formation of VNH and MgVNH in p-type GaN(Mg,H)

被引：1

作者：

Wright, AF ^{[1
]}

Myers, SM

Sanati, M

Estreicher, SK

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Texas Tech Univ, Lubbock, TX 79409 USA

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

gallium nitride; magnesium doping; nitrogen vacancy; hydrogen;

D O I：

10.1016/j.physb.2005.12.122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The reactions V-N(+1) + H+ -> (VNH)(+2) and (MgVN)(0) + H+ -> (MgVNH)(+1) in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)(+2) and (MgVNH)(+1) will form rapidly above 400 degrees C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by V-N is important in p-type GaN and that H suppression of V-N, formation is less effective than previously suggested.(c) 2005 Elsevier B.V. All rights reserved.

引用

页码：477 / 481

页数：5

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