Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix

被引：5

作者：

Volodin, V. A. ^{[1
,2
]}

Gorokhov, E. B. ^{[1
]}

Marin, D. V. ^{[1
,2
]}

Rinnert, H. ^{[3
]}

Miska, P. ^{[3
]}

Vergnat, M. ^{[3
]}

机构：

[1] RAS, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Nancy Univ, Phys Mat Lab, CNRS, F-54506 Vandoeuvre Les Nancy, France

来源：

JETP LETTERS | 2009年 / 89卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

FILMS;

D O I：

10.1134/S0021364009020064

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GeO2 films with germanium nanocrystals (NCs) were deposited from supersaturated GeO vapor with subsequent dissociation on Ge:GeO2. The films were studied using photoluminescence (PL), Raman scattering, IRspectroscopy techniques. Ge NCs in initial film have sizes about 6-8 nm and have no visible PL signal. The broad green-red PL peak was detected in Ge:GeO2 films after thermal annealings. According to effective mass approach, maximum of PL signal from such relatively big Ge NCs should be in IR region. The experimentally observed PL signal is presumably originated due to quasi-direct L (1)-L (3)' optical transitions "folded" in germanium NCs.

引用

页码：76 / 79

页数：4

共 23 条

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