Cu-In fine-pitch-interconnects: influence of processing conditions on the interconnection quality

被引:0
|
作者
Bickel, Steffen [1 ]
Sen, Shawon [1 ]
Meyer, Joerg [1 ]
Panchenko, Iuliana [1 ,2 ]
Wolf, M. Juergen
机构
[1] Tech Univ Dresden, Inst Elect Packaging Technol, Dresden, Germany
[2] Fraunhofer Inst Reliabil & Microintegrat IZM ASSI, Moritzburg, Germany
来源
2018 7TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC) | 2018年
关键词
Cu-In; heterogeneous integration; SLID; low temperature bonding (LTB); fine-pitch interconnects;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cu-In fine pitch interconnects are a promising approach for low-temperature technologies in 3D heterogeneous integration. With decreasing structure sizes, the solder material is consumed within little joining durations. The resulting interconnection zone completely exists of intermetallic compounds (IMCs). Due to the unqiue properties of Cu-In-IMCs the interconnection quality of Cu-In fine-pitch interconnects can be affected in a quite tremendous manner when processing conditions are altered. In this work, we address the influence of the bonding duration, the bonding pressure as well as the storage time of as-plated Cu-In microbumps prior to the bonding process.
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页数:6
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