High-power/low-threshold type-II interband cascade mid-IR laser - Design and modeling

被引:90
作者
Vurgaftman, I [1 ]
Meyer, JR [1 ]
RamMohan, LR [1 ]
机构
[1] WORCESTER POLYTECH INST, WORCESTER, MA 01609 USA
关键词
optical planar waveguides; optoelectronic devices; quantum-well lasers; semiconductor lasers; semiconductor superlattices; tunnel devices/effects;
D O I
10.1109/68.553079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an optimized design and detailed numerical simulations for a mid-IR type-II interband cascade laser (T2ICL) with InAs-In0.3Ga0.7Sb active quantum wells. It is shown that a 15-period T2ICL operating at 300 K and emitting at 3.15 mu m should achieve a much higher differential quantum efficiency (maximum of 0.9 W/A per facet at 300 K) than conventional mid-IR bipolar injection lasers, and a threshold current density much lower than for the intersubband quantum cascade laser.
引用
收藏
页码:170 / 172
页数:3
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