Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties

被引：0

作者：

Fang, ZB ^{[1
]}

Tan, YS ^{[1
]}

Liu, XQ ^{[1
]}

Yang, YH ^{[1
]}

Wang, YY ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

来源：

CHINESE PHYSICS | 2004年 / 13卷 / 08期

关键词：

ZnO films; photoluminescence; RF reactive sputtering;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f(n)-shell transitions in Tb3+ ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity (rho) of 9.34 x 10(-4) Omegacm, transmittance over 80% at the visible region and the strong blue emission.

引用

页码：1330 / 1333

页数：4

共 21 条

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