Specific features of magnetoresistance in overcompensated manganese-doped silicon

被引：8

作者：

Bakhadirkhanov, M. K. ^{[1
]}

Mavlonov, G. H. ^{[1
]}

Iliev, X. M. ^{[1
]}

Ayupov, K. S. ^{[1
]}

Sattarov, O. E. ^{[1
]}

Tachilin, C. A. ^{[1
]}

机构：

[1] Tashkent State Tech Univ, Tashkent 100095, Uzbekistan

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 08期

关键词：

LOW-TEMPERATURE-DIFFUSION; NEGATIVE MAGNETORESISTANCE; RESONANCE; FIELD;

D O I：

10.1134/S106378261408003X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = E (C) - 0.35 eV A center dot E (C) - 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.

引用

页码：986 / 988

页数：3

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