Understanding Residual Stress in Electrodeposited Cu Thin Films

被引:42
作者
Chason, Eric [1 ]
Engwall, Alison [1 ]
Pei, Fei [1 ]
Lafouresse, Manon [2 ]
Bertocci, Ugo [2 ]
Stafford, Gery [2 ]
Murphy, Joseph A. [3 ]
Lenihan, Catherine [3 ]
Buckley, D. Noel [3 ]
机构
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
[3] Univ Limerick, Mat & Surface Sci Inst, Dept Phys & Energy, Limerick, Ireland
基金
爱尔兰科学基金会;
关键词
COMPRESSIVE STRESS; INTERNAL-STRESS; COPPER-FILMS; EVOLUTION;
D O I
10.1149/2.048312jes
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We report on the results of a multi-laboratory study to measure the steady state growth stress of planar copper thin films, electrodeposited from additive-free acidic sulfate electrolyte. Measurements were made using the wafer curvature method, which enabled the stress to be measured in real time as the films were grown. The stress trends toward compressive at low growth rate and becomes increasingly tensile as the growth rate is increased, with a similar dependence observed in each laboratory when the films have comparable grain sizes. The results are explained by a model for stress that focuses on processes that occur at the triple junction between the film surface and the grain boundary as the film grows. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码:D3285 / D3289
页数:5
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