A modified direct nitridation method for formation of nano-AIN whiskers

被引：42
作者：
Radwan, A. [1 ]
Bahgat, M. [1 ]
机构：
[1] CMRDI, Cairo 11421, Egypt
来源：
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY | 2007年 / 181卷 / 1-3期
关键词：
AIN; III-V nitrides; synthesis; direct nitridation; AIN whiskers;
D O I：
10.1016/j.jmatprotec.2006.03.045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The direct nitridation of metallic aluminium under isothermal conditions was studied. Aluminium with 99% purity in both compacted and loose powder forms was nitrided in nitrogen gas flow at the temperature range of 600-1000 degrees C. Compacted Al samples showed very low nitridation tendency till 1000 degrees C. High nitridation conversions were achieved in the powder Al samples where the nitridation started after the melting point of Al and the conversion was greatly improved with increasing the nitridation temperature. The nitridation time and the nitrogen flow rate were found not to be critical for improving the conversion extent. The addition of pre-synthesized A1N powder to the starting Al powder retarded the nitridation conversion whereas the addition of NH4Cl powder enhanced the A1N yield to near completeness. It is found that the addition of NH4Cl promotes the growth of A1N whiskers. (c) 2006 Elsevier B.V. All rights reserved.
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页码：99 / 105
页数：7
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