Effect of substrate bias in bulk and SOI sige-channel p-MOSFETs

被引：1

作者：

Niu, GF

Ruan, G

机构：

[1] Department of Electronic Engineering, Fudan University

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 02期

关键词：

D O I：

10.1016/0038-1101(95)00151-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：305 / 307

页数：3

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