Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

被引：10

作者：

Barseghyan, M. G. ^{[1
,2
]}

Baghramyan, H. M. ^{[3
]}

Laroze, D. ^{[3
,4
]}

Bragard, J. ^{[5
]}

Kirakosyan, A. A. ^{[1
]}

机构：

[1] Yerevan State Univ, Dept Solid State Phys, Yerevan 0025, Armenia

[2] Natl Univ Architecture & Construct Armenia, Yerevan 0009, Armenia

[3] Univ Tarapaca, Inst Alta Invest, Arica, Chile

[4] Univ Glasgow, SUPA Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[5] Univ Navarra, Dept Fis & Matemat Aplicada, E-31080 Pamplona, Spain

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 74卷

关键词：

Coupled quantum dot-ring; Lateral electric field; Exact diagonalization method; Hydrogenic donor impurity; NONLINEAR-OPTICAL PROPERTIES; REFRACTIVE-INDEX CHANGES; HYDROSTATIC-PRESSURE; DONOR IMPURITY; COEFFICIENTS; STATES; EXCITON;

D O I：

10.1016/j.physe.2015.07.032

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident. light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：421 / 425

页数：5

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