Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy

被引：13

作者：

Greenberg, Ya'akov ^{[1
]}

Kelrich, Alex ^{[1
]}

Calahorra, Yonatan ^{[1
]}

Cohen, Shimon ^{[1
]}

Ritter, Dan ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Fac Elect Engn, IL-32000 Haifa, Israel

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 389卷

关键词：

Crystal structure; Nanostructures; Metalorganic molecular beam epitaxy; Selective area VdpOf phase epitaxy; Semiconducting indium phosphide; III-V NANOWIRES; ZINC-BLENDE; BEAM EPITAXY; SEMICONDUCTORS; POLYTYPISM; INTERFACE; SURFACES;

D O I：

10.1016/j.jcrysgro.2013.11.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a study of indium phosphide nanowires grown by the selective area vapor liquid solid technique using metalorganic molecular beam epitaxy. Transmission electron microscopy revealed that nanowires grown at a temperature of up to 450 degrees C had a pure wurtzite structure, but at 480 degrees C a mixed wurtzite-zincblencl structure was obtained. We also accurately measured the migration length of growth precursors along the side facets of the nanowires by monitoring the length of the non-tapered section of the nanowire adjacent to the gold catalyst. The migration length was found to be of the order of 0.3-0.7 mu m and to depend on the diameter of the nanowire. Up to the growth temperature of 450 degrees C the migration length was temperature independent, but it increased dramatically to more than 2 p.m when the nanowires were grown at 480 degrees C. Possible explanations for the observed effects are suggested. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：103 / 107

页数：5

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