CdTe surface roughness by Raman spectroscopy using the 830 nm wavelength

被引:34
作者
Frausto-Reyes, C.
Molina-Contreras, J. Rafael
Medina-Gutierrez, C.
Calixto, Sergio
机构
[1] Ctr Invest Opt AC, Unidad Aguascalientes, Ags 20200, Mexico
[2] Inst Ecnol Aguscalientes, Dept Ingn Elect & Elect, Aguascalientes 20256, Ags, Mexico
[3] Univ Guadalajara, Ctr Univ Los Lagos, Lagos Moreno 47460, Jalisco, Mexico
[4] Ctr Invest Opt AC, Leon 37150, Guanajuato, Spain
关键词
CdTe; roughness; Raman spectroscopy; AFM;
D O I
10.1016/j.saa.2005.07.082
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
A Raman spectroscopic study was performed to detect the surface roughness of a cadmium telluride (CdTe) wafer sample, using the 514.5, 632.8 and 830.0 nm excitations wavelengths. To verify the relation between the roughness and the structure of Raman spectra, in certain zones of the sample, we measured their roughness with an atomic force microscopy. It was found that, using the 830 nm wavelength there is a direct correspondence between the spectrum structure and the surface roughness. For the others wavelengths it was found, however, that there is not a clearly correspondence between them. Our results suggest that, using the excitation wavelength of 830 nm the Raman spectroscopy can be used as an on-line roughness monitor on the CdTe growth. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:51 / 55
页数:5
相关论文
共 16 条
  • [1] Beckmann P., 1963, SCATTERING ELECTROMA
  • [2] Radiative behavior of negatively charged excitons in CdTe-based quantum wells:: A spectral and temporal analysis
    Ciulin, V
    Kossacki, P
    Haacke, S
    Ganière, JD
    Deveaud, B
    Esser, A
    Kutrowski, M
    Wojtowicz, T
    [J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16310 - 16313
  • [3] MOLECULAR-BEAM-EPITAXY GROWTH OF CDTE ON INSB(110) MONITORED IN-SITU BY RAMAN-SPECTROSCOPY
    DREWS, D
    SAHM, J
    RICHTER, W
    ZAHN, DRT
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 4060 - 4065
  • [4] Interface modification of CdTe thin film solar cells by CdCl2-activation
    Fritsche, J
    Schulmeyer, T
    Thissen, A
    Klein, A
    Jaegermann, W
    [J]. THIN SOLID FILMS, 2003, 431 : 267 - 271
  • [5] Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe
    Grann, E
    Chen, Y
    Tsen, KT
    Ferry, DK
    Almeida, T
    Chen, YP
    Faurie, JP
    Sivananthan, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 3840 - 3843
  • [6] Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates
    Huerta-Ruelas, J
    López-López, M
    Zelaya-Angel, O
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1701 - 1705
  • [7] Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe
    Kaneta, A
    Adachi, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (10) : 7360 - 7365
  • [8] Photoreflectance spectroscopy of CdTe(001) around E1 and E1+Δ1:: linear electro-optic spectrum
    Lastras-Martínez, A
    Balderas-Navarro, RE
    Cantú-Alejandro, P
    Lastras-Martínez, LF
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2062 - 2065
  • [9] Reflectance-difference study near the E1 and E1 + Δ1 transition regions of CdTe
    Molina-C, JR
    Espinosa-Luna, R
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (01) : 12 - 16
  • [10] Effect of roughness on the conductivity of semiconducting thin films/quantum wells with double rough boundaries
    Palasantzas, G
    De Hosson, JTM
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 320 - 324