AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

被引：10

作者：

Chang, SJ

Sheu, JK

Su, YK

Jou, MJ

Chi, GC

机构：

[1] IND TECHNOL RES INST,OPTOELECT & SYST LABS,HSINCHU 31015,TAIWAN

[2] NATL CENT UNIV,DEPT PHYS,CHUNGLI 32054,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 08期

关键词：

AlGaInP; LED; wafer direct bonding; MOVPE; GaP;

D O I：

10.1143/JJAP.35.4199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60 mcd/S-r at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

引用

收藏

页码：4199 / 4202

页数：4

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