The theoretical link between voltage loss, reduction in field enhancement factor, and Fowler-Nordheim-plot saturation

被引:29
作者
Forbes, Richard G. [1 ,2 ]
机构
[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[2] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 7XH, Surrey, England
关键词
EMISSION PROPERTIES;
D O I
10.1063/1.4979320
中图分类号
O59 [应用物理学];
学科分类号
摘要
With a large-area field electron emitter, when an individual post-like emitter is sufficiently resistive, and current through it is sufficiently large, then voltage loss occurs along it. This letter provides a simple analytical and conceptual demonstration that this voltage loss is directly and inextricably linked to a reduction in the field enhancement factor (FEF) at the post apex. A formula relating apex-FEF reduction to this voltage loss was obtained in the paper by Minoux et al. [Nano Lett. 5, 2135 (2005)] by fitting to numerical results from a Laplace solver. This letter derives the same formula analytically, by using a "floating sphere" model. The analytical proof brings out the underlying physics more clearly and shows that the effect is a general phenomenon, related to reduction in the magnitude of the surface charge in the most protruding parts of an emitter. Voltage-dependent FEF-reduction is one cause of "saturation" in Fowler-Nordheim (FN) plots. Another is a voltage-divider effect, due to measurement-circuit resistance. An integrated theory of both effects is presented. Both together, or either by itself, can cause saturation. Experimentally, if saturation occurs but voltage loss is small (<20 V, say), then saturation is more probably due to FEF-reduction than voltage division. In this case, existing treatments of electrostatic interaction ("shielding") between closely spaced emitters may need modification. Other putative causes of saturation exist, so the present theory is a partial story. Its extension seems possible and could lead to a more general physical understanding of the causes of FN-plot saturation. Published by AIP Publishing.
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页数:4
相关论文
共 17 条
[1]  
Cole MT, 2015, MICRO NANO TECHNOL, P125, DOI 10.1016/B978-0-323-28990-0.00005-1
[2]  
Forbes R. G., ARXIV150406134V7
[3]   Some comments on models for field enhancement [J].
Forbes, RG ;
Edgcombe, CJ ;
Valdrè, U .
ULTRAMICROSCOPY, 2003, 95 (1-4) :57-65
[4]   Physical electrostatics of small field emitter arrays/clusters [J].
Forbes, Richard G. .
JOURNAL OF APPLIED PHYSICS, 2016, 120 (05)
[5]  
Forbes RG, 2015, JORDAN J PHYS, V8, P125
[6]   Transmission coefficients for the exact triangular barrier: an exact general analytical theory that can replace Fowler & Nordheim's 1928 theory [J].
Forbes, Richard G. ;
Deane, Jonathan H. B. .
PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2011, 467 (2134) :2927-2947
[7]   Field emission energy distributions from individual multiwalled carbon nanotubes [J].
Fransen, MJ ;
van Rooy, TL ;
Kruit, P .
APPLIED SURFACE SCIENCE, 1999, 146 (1-4) :312-327
[8]   Field emission properties of nanocrystalline chemically vapor deposited-diamond films [J].
Gröning, O ;
Küttel, OM ;
Gröning, P ;
Schlapbach, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1970-1986
[9]   Dependence of optimal spacing on applied field in ungated field emitter arrays [J].
Harris, J. R. ;
Jensen, K. L. ;
Shiffler, D. A. .
AIP ADVANCES, 2015, 5 (08)
[10]   Nanotube field electron emission: principles, development, and applications [J].
Li, Yunhan ;
Sun, Yonghai ;
Yeow, J. T. W. .
NANOTECHNOLOGY, 2015, 26 (24)