Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width

被引：3

作者：

Melezhik, E. O. ^{[1
]}

Gumenjuk-Sichevska, J. V. ^{[1
]}

Sizov, F. F. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Pr Nauki 41, UA-03028 Kiev, Ukraine

来源：

SPRINGERPLUS | 2016年 / 5卷

关键词：

HgTe; Mobility; Boltzmann transport equation; Inelastic scattering; Screening; SCATTERING;

D O I：

10.1186/s40064-016-1715-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron-phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided.

引用

页码：1 / 10

页数：10

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