Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width

被引：3

作者：

Melezhik, E. O. ^{[1
]}

Gumenjuk-Sichevska, J. V. ^{[1
]}

Sizov, F. F. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Pr Nauki 41, UA-03028 Kiev, Ukraine

来源：

SPRINGERPLUS | 2016年 / 5卷

关键词：

HgTe; Mobility; Boltzmann transport equation; Inelastic scattering; Screening; SCATTERING;

D O I：

10.1186/s40064-016-1715-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron-phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided.

引用

页码：1 / 10

页数：10

共 48 条

[1] Simulation of electron mobility in semi-metal HgCdTe quantum wells: composition dependencies [J].

Melezhik, E. O. ;

Gumenjuk-Sichevska, J. V. ;

Sizov, F. F. .

2015 IEEE 15TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS), 2015,

[2] Numerical modeling of transport properties and noise in semi-metal HgCdTe quantum well channel for THz hot-electron bolometer [J].

Melezhik, E. O. ;

Gumenjuk-Sichevska, J. V. ;

Sizov, F. F. .

2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,

[3] Interplay between quantum well width and interface roughness for electron transport mobility in GaAs quantum wells [J].

Kamburov, D. ;

Baldwin, K. W. ;

West, K. W. ;

Shayegan, M. ;

Pfeiffer, L. N. .

APPLIED PHYSICS LETTERS, 2016, 109 (23)

[4] Structure determination of gaseous metal and semi-metal cluster ions by ion mobility spectrometry [J].

Weis, P .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY, 2005, 245 (1-3) :1-13

[5] Interband Electron Transitions Energy in Multiple HgCdTe Quantum Wells at Room Temperature [J].

Mikhailov, Nikolay N. N. ;

Dvoretsky, Sergey A. A. ;

Remesnik, Vladimir G. G. ;

Uzhakov, Ivan N. N. ;

Shvets, Vasyliy A. A. ;

Aleshkin, Vladimir Ya. .

PHOTONICS, 2023, 10 (04)

[6] Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells [J].

Dobretsova, A. A. ;

Kvon, Z. D. ;

Braginskii, L. S. ;

Entin, M. V. ;

Mikhailov, N. N. .

SEMICONDUCTORS, 2018, 52 (11) :1468-1472

[7] High-field electron mobility in InGaAs quantum wells [J].

Pozela, Juras ;

Pozela, Karolis ;

Shkolnik, Alexey ;

Suziedelis, Algirdas ;

Juciene, Vida ;

Mikhrin, Sergey ;

Mikhrin, Vladimir .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12, 2009, 6 (12) :2713-+

[8] Dependence of the Dresselhaus spin-orbit interaction on the quantum well width [J].

Walser, M. P. ;

Siegenthaler, U. ;

Lechner, V. ;

Schuh, D. ;

Ganichev, S. D. ;

Wegscheider, W. ;

Salis, G. .

PHYSICAL REVIEW B, 2012, 86 (19)

[9] Electron mobility of inverted InAs/GaSb quantum well structure [J].

Huang, Wenjun ;

Ma, Wenquan ;

Huang, Jianliang ;

Zhang, Yanhua ;

Cao, Yulian ;

Zhao, Chengcheng ;

Guo, Xiaolu .

SOLID STATE COMMUNICATIONS, 2017, 267 :29-32

[10] Mobility and metal-insulator transition of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells [J].

Gold, A. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)

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