Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (311)B by molecular beam epitaxy

被引：5

作者：

Oshima, Ryuji ^{[1
]}

Shoji, Yasushi ^{[2
]}

Takata, Ayami ^{[1
,2
]}

Okada, Yoshitaka ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Low-dimensional structures; Molecular beam epitaxy; Semiconducting III-V materials; SOLAR-CELLS; MBE;

D O I：

10.1016/j.jcrysgro.2008.10.108

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the Structural and optical properties of 10 stacked layers of self-organized In(0.4)Ga(0.6)As quantum dots (QDs) grown on GaAs (31 1)B substrates by atomic hydrogen-assisted radio frequency (RF)-molecular beam epitaxy. A 40 nm-thick GaN(0.007)As(0.993) dilute nitride, which is used to cover each QD layer acts as a strain-compensation layer (SCL). The density of strain-compensated In(0.4)Ga(0.6)As QDs on GaAs (3 1 1)B can be controlled between 2 x 10(10) and 1 x 10(11) cm(-2) by simply changing the growth temperature. Closely spaced In(0.4)Ga(0.6)As QDs on GaAs (3 11)B shows an ordered structure, in which we observe clear peaks in the two-dimensional fast Fourier transformation image. The temperature dependence of photoluminescence (PL) spectra shows a narrower linewidth over the whole temperature range 30-300 K for strain-compensated QDs owing to better uniformity in the QD size. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1770 / 1773

页数：4

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